Junior RF Design Engineer

Recruiter
Anonymous
Location
Cambridge
Salary
30000.00 - 40000.00 GBP Annual + Excellent Benefits
Posted
08 Dec 2016
Closes
23 Dec 2016
Sectors
Engineering, Design
Contract Type
Permanent
Hours
Full Time
A growing specialist business is seeking a Junior RF Design Engineer with microwave power amplifiers using ideally GaN discrete transistors.

Our client offers flexible working benefits, working in a highly focussed and professional environment.

Should you possess additional skills, our client would would very interested in hearing from you.

• Monolithic Microwave Integrated Circuit (MMIC)
• Gallium Nitride (GaN)
• Gallium Arsenide (GaAs)
• High efficiency power amplification (PHEMT and HBT)
• Si RFIC or Microwave PCB/MIC
• Multi carrier Modulation (MCM)
• Single Mode Fibre RF (SMF)
• High Density Interconnect (HDI) FR4 Digital Signals
• Low Temperature Co-fired Ceramics (LTCC)
• Microwave Power Amplifier
• Microwave and mm wave sub systems
• ADS software would be an added benefit
• Surface Mount Technology (SMT)

Would be a positive advantage if you have exposure in communication system design with IC packaging technology, RFOW, solid state microwave design, component with low noise VCO/PLL/Synthesiser design and/or digital modulation schemes